SD1446 (MRF455)
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MRF455
Silicon NPN Transistor
Final RF Power Output
Absolute Maximum Ratings:
| Collector-Emitter Voltage (RBE = Infinity), VCEO | 18V |
| Collector-Base Voltage, VCBO | 36V |
| Emitter-Base Voltage, VEBO | 4,0V |
| Collector Current, IC | 15A |
| Collector Power Dissipation (TC = +50°C), PD | 175W |
| Storage Temperature Range, Tstg | -65° to +150°C |
| Thermal Resistance, Junction-to-Case, RthJC | 1°C/W |
Electrical Characteristics: (TC = +25°C unless otherwise specified)
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC = 100mA, IB = 0 | 18 | - | - | V |
| Collector-Emitter Breakdown Voltage | V(BR)CES | IC = 50mA, VBE = 0 | 36 | - | - | V |
| Emitter-Base Breakdown Voltage | V(BR)EBO | IE = 100mA, IC = 0 | 4 | - | - | V |
| Collector Cutoff Current | ICBO | VCB = 30V IE = 0 | - | - | 1 | mA |
| DC Forward Current Gain | hFE | VCE = 5V, IC = 500mA | 10 | - | 150 | |
| Power Gain | GP | VCC = 12,5V, Pout = 60W, f = 30MHz | 13 | - | - | dB |